IRF7328PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Power - Max :

2W

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain-source On Resistance-Max :

0.021Ohm

DS Breakdown Voltage-Min :

30V

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

Drain Current-Max (Abs) (ID) :

8A

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 P-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

2675pF @ 25V

Power Dissipation-Max (Abs) :

2W

Terminal Form :

Gull wing

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

32A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

8A

JEDEC-95 Code :

MS-012AA

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2010

Rds On (Max) @ Id, Vgs :

21m Ω @ 8A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Number of Elements :

2

Series :

HEXFET®

Packaging :

Tube

Base Part Number :

IRF7328PBF