IRF7319TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

1997

Terminal Form :

Gull wing

Nominal Vgs :

1 V

Lead Free :

Contains Lead, Lead Free

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Terminations :

8

Power Dissipation :

2W

Number of Elements :

2

Row Spacing :

6.3 mm

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

ECCN Code :

EAR99

Base Part Number :

IRF7319PBF

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

30A

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

6.5A

Series :

HEXFET®

Terminal Position :

Dual

Threshold Voltage :

1V

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

12 Weeks

Rise Time :

13ns

FET Type :

N and P-Channel

Max Power Dissipation :

2W

FET Feature :

Standard

Current Rating :

6.5A

Length :

4.9784mm

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

34 ns

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

29m Ω @ 5.8A, 10V

Contact Plating :

Tin

Height :

1.4986mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

3.9878mm

Fall Time (Typ) :

32 ns

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mount :

Surface Mount

Radiation Hardening :

No

Resistance :

29mOhm