IRF7319TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

29m Ω @ 5.8A, 10V

Width :

3.9878mm

Max Power Dissipation :

2W

Current Rating :

6.5A

Rise Time :

13ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Series :

HEXFET®

Terminal Form :

Gull wing

Number of Terminations :

8

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Height :

1.4986mm

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Mount :

Surface Mount

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

RoHS Status :

ROHS3 Compliant

Length :

4.9784mm

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Nominal Vgs :

1 V

Threshold Voltage :

1V

Transistor Application :

SWITCHING

Base Part Number :

IRF7319PBF

Fall Time (Typ) :

32 ns

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

30A

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Published :

1997

Transistor Element Material :

SILICON

ECCN Code :

EAR99

FET Type :

N and P-Channel

Turn-Off Delay Time :

34 ns

Factory Lead Time :

12 Weeks

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Position :

Dual

Resistance :

29mOhm

Power Dissipation :

2W

Lead Free :

Contains Lead, Lead Free

Continuous Drain Current (ID) :

6.5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Row Spacing :

6.3 mm

Drain to Source Breakdown Voltage :

30V

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2