IRF7319TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

29m Ω @ 5.8A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Fall Time (Typ) :

32 ns

Packaging :

Tape and Reel (TR)

Height :

1.4986mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

ECCN Code :

EAR99

Number of Terminations :

8

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2W

Continuous Drain Current (ID) :

6.5A

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

REACH SVHC :

No SVHC

Width :

3.9878mm

Transistor Application :

SWITCHING

Terminal Position :

Dual

Nominal Vgs :

1 V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Resistance :

29mOhm

Threshold Voltage :

1V

FET Type :

N and P-Channel

Row Spacing :

6.3 mm

Lead Free :

Contains Lead, Lead Free

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Base Part Number :

IRF7319PBF

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Pulsed Drain Current-Max (IDM) :

30A

Turn-Off Delay Time :

34 ns

FET Feature :

Standard

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Rise Time :

13ns

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Max Power Dissipation :

2W

Length :

4.9784mm

Current Rating :

6.5A