IRF7319TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Nominal Vgs :

1 V

Mount :

Surface Mount

Width :

3.9878mm

Rds On (Max) @ Id, Vgs :

29m Ω @ 5.8A, 10V

Current Rating :

6.5A

Mounting Type :

Surface Mount

Power Dissipation :

2W

Rise Time :

13ns

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage :

1V

Fall Time (Typ) :

32 ns

Base Part Number :

IRF7319PBF

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

30A

Resistance :

29mOhm

Row Spacing :

6.3 mm

Published :

1997

Transistor Element Material :

SILICON

Lead Free :

Contains Lead, Lead Free

Length :

4.9784mm

Number of Terminations :

8

FET Type :

N and P-Channel

Height :

1.4986mm

Max Power Dissipation :

2W

Series :

HEXFET®

Continuous Drain Current (ID) :

6.5A

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

ECCN Code :

EAR99

Turn-Off Delay Time :

34 ns

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

FET Feature :

Standard

Radiation Hardening :

No

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Number of Elements :

2

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)