IRF7319TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Contains Lead, Lead Free

Length :

4.9784mm

Fall Time (Typ) :

32 ns

FET Feature :

Standard

Number of Pins :

8

Transistor Application :

SWITCHING

Current Rating :

6.5A

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

RoHS Status :

ROHS3 Compliant

Base Part Number :

IRF7319PBF

Rise Time :

13ns

Threshold Voltage :

1V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Published :

1997

Width :

3.9878mm

REACH SVHC :

No SVHC

Height :

1.4986mm

ECCN Code :

EAR99

Mount :

Surface Mount

Continuous Drain Current (ID) :

6.5A

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Resistance :

29mOhm

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn-Off Delay Time :

34 ns

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Power Dissipation :

2W

Number of Elements :

2

Max Power Dissipation :

2W

Nominal Vgs :

1 V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

FET Type :

N and P-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Row Spacing :

6.3 mm

Rds On (Max) @ Id, Vgs :

29m Ω @ 5.8A, 10V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Pulsed Drain Current-Max (IDM) :

30A