IRF7319TRPBF

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Mfr.Part #
IRF7319TRPBF
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N/P-CH 30V 8SOIC
Stock
99,416
In Stock :
99,416

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Arrays
Lead Free :
Contains Lead, Lead Free
Length :
4.9784mm
Fall Time (Typ) :
32 ns
FET Feature :
Standard
Number of Pins :
8
Transistor Application :
SWITCHING
Current Rating :
6.5A
Additional Feature :
AVALANCHE RATED, ULTRA LOW RESISTANCE
RoHS Status :
ROHS3 Compliant
Base Part Number :
IRF7319PBF
Rise Time :
13ns
Threshold Voltage :
1V
Packaging :
Tape and Reel (TR)
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Published :
1997
Width :
3.9878mm
REACH SVHC :
No SVHC
Height :
1.4986mm
ECCN Code :
EAR99
Mount :
Surface Mount
Continuous Drain Current (ID) :
6.5A
Input Capacitance (Ciss) (Max) @ Vds :
650pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Resistance :
29mOhm
Factory Lead Time :
12 Weeks
Gate to Source Voltage (Vgs) :
20V
Contact Plating :
Tin
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
30V
Vgs(th) (Max) @ Id :
1V @ 250μA
Turn-Off Delay Time :
34 ns
Terminal Position :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HEXFET®
Power Dissipation :
2W
Number of Elements :
2
Max Power Dissipation :
2W
Nominal Vgs :
1 V
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
8
FET Type :
N and P-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Row Spacing :
6.3 mm
Rds On (Max) @ Id, Vgs :
29m Ω @ 5.8A, 10V
Polarity/Channel Type :
N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM) :
30A
Datasheets
IRF7319TRPBF
Introducing Transistors - FETs, MOSFETs - Arrays Infineon Technologies IRF7319TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Base Part Number:IRF7319PBF, Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:8, IRF7319TRPBF pinout, IRF7319TRPBF datasheet PDF, IRF7319TRPBF amp .Beyond Transistors - FETs, MOSFETs - Arrays Infineon Technologies IRF7319TRPBF ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF7319TRPBF


IRF7319TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at

IRF7319TRPBF              Description


  The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve extremely low on-resistance per silicon area. Combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, it provides designers with an extremely efficient and reliable device that can be used in a variety of applications.

SO-8 is improved through customized ead rame to enhance thermomechanical properties and multi-chip capabilities, making it suitable for power applications. Through these improvements, a variety of devices can be used in applications that significantly reduce circuit board space. The package is designed for gas phase, infrared or wave soldering technology.



IRF7319TRPBF                 Features   


Generation VTechnology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Surface Mount

Fully Avalanche Rated

Lead-Free


IRF7319TRPBF                 Applications


it provides designers with an extremely efficient and reliable device that can be used in a variety of applications.

 




 



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