IRF7313TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

IRF7313PBF

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Length :

4.9784mm

Threshold Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

JESD-609 Code :

e3

Dual Supply Voltage :

30V

Continuous Drain Current (ID) :

6.5A

Turn On Delay Time :

8.1 ns

Voltage - Rated DC :

30V

ECCN Code :

EAR99

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Lead Free :

Lead Free

Published :

2002

Number of Elements :

2

Mounting Type :

Surface Mount

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

Recovery Time :

68 ns

Resistance :

29mOhm

REACH SVHC :

No SVHC

Mount :

Surface Mount

Series :

HEXFET®

Power Dissipation :

2W

Fall Time (Typ) :

17 ns

Height :

1.75mm

FET Feature :

Standard

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current Rating :

6.5A

Rds On (Max) @ Id, Vgs :

29m Ω @ 5.8A, 10V

Row Spacing :

6.3 mm

Nominal Vgs :

1 V

Number of Channels :

2

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn-Off Delay Time :

26 ns

Gate to Source Voltage (Vgs) :

20V

Max Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Pulsed Drain Current-Max (IDM) :

30A

Rise Time :

8.9ns

Width :

4.05mm

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Terminations :

8

FET Type :

2 N-Channel (Dual)