IRF7311TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

100 mJ

Rise Time :

17ns

Drain to Source Breakdown Voltage :

20V

Number of Elements :

2

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Rated DC :

20V

Rds On (Max) @ Id, Vgs :

29m Ω @ 6A, 4.5V

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Power Dissipation :

2W

Height :

1.4986mm

Gate to Source Voltage (Vgs) :

12V

Current Rating :

6.6A

Operating Temperature :

-55°C~150°C TJ

Width :

3.9878mm

Turn-Off Delay Time :

38 ns

Turn On Delay Time :

8.1 ns

Mount :

Surface Mount

Fall Time (Typ) :

31 ns

Series :

HEXFET®

Max Power Dissipation :

2W

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 15V

Vgs(th) (Max) @ Id :

700mV @ 250μA

Resistance :

29mOhm

Element Configuration :

Dual

Number of Terminations :

8

Base Part Number :

IRF7311PBF

Threshold Voltage :

700mV

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

4.9784mm

Published :

2004

Number of Pins :

8

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

6.6A

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual)

Recovery Time :

77 ns