IRF7311TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

20V

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2001

Pulsed Drain Current-Max (IDM) :

26A

Drain-source On Resistance-Max :

0.029Ohm

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

700mV @ 250μA

Avalanche Energy Rating (Eas) :

100 mJ

Number of Elements :

2

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

6.6A

Drain Current-Max (Abs) (ID) :

6.6A

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 15V

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-G8

FET Type :

2 N-Channel (Dual)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

2W

Rds On (Max) @ Id, Vgs :

29m Ω @ 6A, 4.5V

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

8

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Terminal Form :

Gull wing

JEDEC-95 Code :

MS-012AA

Transistor Application :

SWITCHING