IRF7306TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

-30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Additional Feature :

ULTRA LOW RESISTANCE

Turn-Off Delay Time :

25 ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Length :

4.9784mm

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Rise Time :

17ns

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

-3.6A

Pulsed Drain Current-Max (IDM) :

14A

Number of Channels :

2

Row Spacing :

6.3 mm

Base Part Number :

IRF7306PBF

Transistor Application :

SWITCHING

Recovery Time :

80 ns

Resistance :

100MOhm

Current Rating :

-3.6A

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.8A, 10V

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Turn On Delay Time :

11 ns

Height :

1.75mm

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Elements :

2

Voltage - Rated DC :

-30V

Published :

1997

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

2W

Max Junction Temperature (Tj) :

150°C

Terminal Form :

Gull wing

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

3.6A

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

REACH SVHC :

No SVHC

Mount :

Surface Mount

Fall Time (Typ) :

18 ns

Threshold Voltage :

-1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-1 V

Width :

4.05mm

Factory Lead Time :

12 Weeks

Power Dissipation :

2W

FET Type :

2 P-Channel (Dual)

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR