IRF7204PBF
- Mfr.Part #
- IRF7204PBF
- Manufacturer
- International Rectifier
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 5.3A 8SO
- Stock
- 58,500
- In Stock :
- 58,500
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 5.3A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 8
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 1997
- Terminal Position :
- Dual
- Series :
- HEXFET®
- Drain Current-Max (Abs) (ID) :
- 5.3A
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JEDEC-95 Code :
- MS-012AA
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 20V
- Terminal Form :
- Gull wing
- Packaging :
- Tube
- JESD-30 Code :
- R-PDSO-G8
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Factory Lead Time :
- 14 Weeks
- Pulsed Drain Current-Max (IDM) :
- 21A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±12V
- Power Dissipation-Max :
- 2.5W Tc
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.06Ohm
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 860pF @ 10V
- DS Breakdown Voltage-Min :
- 20V
- Datasheets
- IRF7204PBF

P-Channel Tube 60m Ω @ 5.3A, 10V ±12V 860pF @ 10V 25nC @ 10V 20V 8-SOIC (0.154, 3.90mm Width)
IRF7204PBF Description
IRF7204PBF is a 20V Single P-Channel HEXFET Power MOSFET in a SO-8 package. International Rectifier's IRF7204PBF HEXFETs is of the fourth generation and utilize advanced processing techniques to achieve the lowest on-resistance possible per silicon area.
IRF7204PBF Features
-
Fast Switching
-
RoHS Compliant
-
Low RDS(on)
-
Industry-leading quality
-
Dynamic dv/dt Rating
-
Fully Avalanche Rated
-
175??C Operating Temperature
-
P-Channel MOSFET
IRF7204PBF Applications
-
Motor drivers
-
DC-DC converters
-
Power amplifiers
-
Power switching
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