IRF7201PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2003

Terminal Position :

Dual

Surface Mount :

yes

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Tc

JESD-30 Code :

R-PDSO-G8

Vgs (Max) :

±20V

Terminal Form :

Gull wing

JEDEC-95 Code :

MS-012AA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Current-Max (IDM) :

58A

DS Breakdown Voltage-Min :

30V

Number of Terminations :

8

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.3A, 10V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.03Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1V @ 250μA

Avalanche Energy Rating (Eas) :

70 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

FET Type :

N-Channel

Additional Feature :

High Reliability

Drain Current-Max (Abs) (ID) :

7.3A

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)