IRF6894MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Continuous Drain Current (ID) :

32A

Pulsed Drain Current-Max (IDM) :

260A

Drain Current-Max (Abs) (ID) :

33A

Fall Time (Typ) :

14 ns

Case Connection :

DRAIN

Published :

2004

FET Feature :

Schottky Diode (Body)

Mount :

Surface Mount

Turn On Delay Time :

16 ns

Terminal Position :

BOTTOM

Number of Terminations :

3

Turn-Off Delay Time :

20 ns

Drain to Source Breakdown Voltage :

25V

Power Dissipation :

54W

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Resistance :

1.3MOhm

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4160pF @ 13V

Gate to Source Voltage (Vgs) :

16V

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 4.5V

Power Dissipation-Max :

2.1W Ta 54W Tc

Number of Pins :

7

Current - Continuous Drain (Id) @ 25°C :

32A Ta 160A Tc

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.1V @ 100μA

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 33A, 10V

Series :

HEXFET®

Vgs (Max) :

±16V

JESD-609 Code :

e3

Rise Time :

42ns

Factory Lead Time :

13 Weeks

Operating Temperature :

-40°C~150°C TJ

JESD-30 Code :

R-XBCC-N3

Package / Case :

DirectFET™ Isometric MX

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount