IRF6811STRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Resistance :

3.7mOhm

Series :

HEXFET®

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 19A, 10V

Power Dissipation-Max :

2.1W Ta 32W Tc

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation :

2.1W

RoHS Status :

ROHS3 Compliant

Rise Time :

19ns

Drain to Source Breakdown Voltage :

25V

Transistor Application :

SWITCHING

Published :

2005

Height :

700μm

JESD-609 Code :

e1

Factory Lead Time :

13 Weeks

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Turn On Delay Time :

8.7 ns

Contact Plating :

Copper, Silver, Tin

Gate to Source Voltage (Vgs) :

16V

Turn-Off Delay Time :

11 ns

Vgs(th) (Max) @ Id :

2.1V @ 35µA

Operating Temperature :

-40°C~150°C TJ

FET Type :

N-Channel

Vgs (Max) :

±16V

Continuous Drain Current (ID) :

19A

Avalanche Energy Rating (Eas) :

32 mJ

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1590pF @ 13V

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

74A

Number of Pins :

6

Qualification Status :

Not Qualified

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

DirectFET™ Isometric SQ

Terminal Form :

NO LEAD

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

19A Ta 74A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

5.5 ns

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-XBCC-N2