IRF6810STRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Package / Case :

DirectFET™ Isometric S1

Input Capacitance (Ciss) (Max) @ Vds :

1038pF @ 13V

Number of Terminations :

3

JESD-609 Code :

e3

Operating Temperature :

-40°C~150°C TJ

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Published :

2011

Mount :

Surface Mount

Continuous Drain Current (ID) :

16A

Drain-source On Resistance-Max :

0.0052Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

25V

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

4.8 ns

Turn On Delay Time :

8.2 ns

Gate to Source Voltage (Vgs) :

16V

Factory Lead Time :

13 Weeks

ECCN Code :

EAR99

FET Type :

N-Channel

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 16A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.1V @ 25μA

Drain Current-Max (Abs) (ID) :

50A

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

22ns

Power Dissipation-Max :

2.1W Ta 20W Tc

JESD-30 Code :

R-XBCC-N3

Terminal Position :

BOTTOM

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Turn-Off Delay Time :

11 ns

Radiation Hardening :

No

Power Dissipation :

2.1W

Transistor Element Material :

SILICON

Vgs (Max) :

±16V

Current - Continuous Drain (Id) @ 25°C :

16A Ta 50A Tc