IRF6798MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

37A

Number of Terminations :

3

Width :

5.05mm

FET Feature :

Schottky Diode (Body)

JESD-30 Code :

R-XBCC-N3

RoHS Status :

RoHS Compliant

Number of Pins :

5

Power Dissipation-Max :

2.8W Ta 78W Tc

Turn-Off Delay Time :

20 ns

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Published :

2008

Turn On Delay Time :

15 ns

Terminal Position :

BOTTOM

Package / Case :

DirectFET™ Isometric MX

Radiation Hardening :

No

Transistor Application :

SWITCHING

Operating Temperature :

-40°C~150°C TJ

Drain to Source Breakdown Voltage :

25V

Current - Continuous Drain (Id) @ 25°C :

37A Ta 197A Tc

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Length :

6.35mm

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 4.5V

Rise Time :

31ns

ECCN Code :

EAR99

Height :

506μm

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 37A, 10V

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

220 mJ

Vgs (Max) :

±20V

FET Type :

N-Channel

Fall Time (Typ) :

16 ns

Drain-source On Resistance-Max :

0.0013Ohm

Input Capacitance (Ciss) (Max) @ Vds :

6560pF @ 13V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

300A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

78W

Drain Current-Max (Abs) (ID) :

197A

Number of Elements :

1