IRF6797MTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-40°C

Rds On Max :

1.4 mΩ

Published :

2008

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Input Capacitance (Ciss) (Max) @ Vds :

5790pF @ 13V

Width :

5.05mm

Resistance :

2.4MOhm

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

1.8V

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 4.5V

FET Type :

N-Channel

Continuous Drain Current (ID) :

36A

Height :

508μm

Recovery Time :

45 ns

Number of Elements :

1

Input Capacitance :

5.79nF

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Rise Time :

32ns

Operating Temperature :

-40°C~150°C TJ

Drain to Source Breakdown Voltage :

25V

Current - Continuous Drain (Id) @ 25°C :

36A Ta 210A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

25V

Number of Pins :

7

Rds On (Max) @ Id, Vgs :

1.4mOhm @ 38A, 10V

Series :

HEXFET®

Power Dissipation-Max :

2.8W Ta 89W Tc

Dual Supply Voltage :

25V

Power Dissipation :

2.8W

Turn On Delay Time :

22 ns

Mounting Type :

Surface Mount

Nominal Vgs :

1.8 V

Package / Case :

DirectFET™ Isometric MX

Max Operating Temperature :

150°C

Termination :

SMD/SMT

Mount :

Surface Mount

Length :

5.45mm

Supplier Device Package :

DIRECTFET™ MX

Turn-Off Delay Time :

20 ns

Fall Time (Typ) :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Resistance :

2.4MOhm