IRF6795MTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

1.8 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

FET Type :

N-Channel

Series :

HEXFET®

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Rise Time :

27ns

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Termination :

SMD/SMT

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 32A, 10V

Drain to Source Breakdown Voltage :

25V

Length :

6.35mm

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Published :

2010

Turn-Off Delay Time :

16 ns

Resistance :

1.8MOhm

Operating Temperature :

-40°C~150°C TJ

Case Connection :

DRAIN

Recovery Time :

41 ns

JESD-609 Code :

e1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

5

JESD-30 Code :

R-XBCC-N3

Vgs (Max) :

±20V

Package / Case :

DirectFET™ Isometric MX

Transistor Element Material :

SILICON

Terminal Finish :

TIN SILVER COPPER

Fall Time (Typ) :

11 ns

Power Dissipation :

2.8W

Current - Continuous Drain (Id) @ 25°C :

32A Ta 160A Tc

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Width :

5.05mm

Additional Feature :

LOW CONDUCTION LOSS

Height :

506μm

ECCN Code :

EAR99

Mount :

Surface Mount

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4280pF @ 13V

Continuous Drain Current (ID) :

32A

Dual Supply Voltage :

25V

Lead Free :

Lead Free

Radiation Hardening :

No

Power Dissipation-Max :

2.8W Ta 75W Tc

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 4.5V

Number of Terminations :

3

Turn On Delay Time :

16 ns

Configuration :

SINGLE WITH BUILT-IN DIODE