IRF6794MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-40°C

Rds On Max :

1.7 mΩ

Length :

6.35mm

Drain to Source Breakdown Voltage :

25V

Power Dissipation :

100W

Radiation Hardening :

No

Height :

506μm

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.7mOhm @ 32A, 10V

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

32A Ta 200A Tc

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

32A

Fall Time (Typ) :

9.6 ns

Package / Case :

DirectFET™ Isometric MX

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Power Dissipation-Max :

2.8W Ta 100W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Feature :

Schottky Diode (Body)

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

4420pF @ 13V

Operating Temperature :

-40°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

DIRECTFET™ MX

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Drain to Source Voltage (Vdss) :

25V

RoHS Status :

RoHS Compliant

Rise Time :

25ns

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Turn-Off Delay Time :

9.7 ns

Drain to Source Resistance :

3mOhm

Turn On Delay Time :

15 ns

Input Capacitance :

4.42nF

Number of Elements :

1

Width :

5.05mm

Number of Pins :

5