IRF6775MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1411pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Case Connection :

DRAIN

Rise Time :

7.8ns

Factory Lead Time :

12 Weeks

Published :

2007

Power Dissipation-Max :

2.8W Ta 89W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

5.8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Package / Case :

DirectFET™ Isometric MZ

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

4.9A Ta 28A Tc

Drain Current-Max (Abs) (ID) :

28A

JESD-609 Code :

e1

Turn On Delay Time :

5.9 ns

Width :

5.0546mm

Height :

508μm

Number of Elements :

1

Transistor Application :

AMPLIFIER

Continuous Drain Current (ID) :

4.9A

JESD-30 Code :

R-XBCC-N3

FET Type :

N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs(th) (Max) @ Id :

5V @ 100µA

Length :

6.35mm

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

39A

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

56m Ω @ 5.6A, 10V

Vgs (Max) :

±20V

Operating Temperature :

-40°C~150°C TJ

Avalanche Energy Rating (Eas) :

33 mJ

Power Dissipation :

2.8W

Number of Pins :

5

Terminal Position :

BOTTOM

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

15 ns

Series :

HEXFET®

Drain to Source Breakdown Voltage :

150V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V