IRF6729MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

15 ns

Published :

2009

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-40°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

22 ns

Series :

HEXFET®

Power Dissipation :

104W

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

31mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 31A, 10V

Length :

6.35mm

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Turn-Off Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

6030pF @ 15V

Mounting Type :

Surface Mount

Height :

506μm

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.8W Ta 104W Tc

Case Connection :

DRAIN

Number of Terminations :

3

Terminal Position :

Dual

Width :

5.05mm

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Rise Time :

37ns

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 4.5V

Avalanche Energy Rating (Eas) :

260 mJ

Number of Pins :

5

Current - Continuous Drain (Id) @ 25°C :

31A Ta 190A Tc

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-G3

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Package / Case :

DirectFET™ Isometric MX

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

ECCN Code :

EAR99

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)