IRF6727MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.35mm

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-XBCC-N3

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 4.5V

Rise Time :

31ns

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Package / Case :

DirectFET™ Isometric MX

Height :

508μm

Turn On Delay Time :

21 ns

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 32A, 10V

Current - Continuous Drain (Id) @ 25°C :

32A Ta 180A Tc

Number of Pins :

5

Input Capacitance (Ciss) (Max) @ Vds :

6190pF @ 15V

Threshold Voltage :

1.8V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

24 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Published :

2009

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Series :

HEXFET®

Power Dissipation-Max :

2.8W Ta 89W Tc

Power Dissipation :

89W

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

16 ns

JESD-609 Code :

e1

Mount :

Surface Mount

Radiation Hardening :

No

FET Type :

N-Channel

Width :

5.0546mm

Operating Temperature :

-40°C~150°C TJ

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

32A

Pulsed Drain Current-Max (IDM) :

260A