IRF6726MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

1.7 V

Terminal Position :

BOTTOM

Number of Terminations :

3

Turn On Delay Time :

20 ns

Radiation Hardening :

No

Power Dissipation :

89W

Current - Continuous Drain (Id) @ 25°C :

32A Ta 180A Tc

FET Type :

N-Channel

Published :

2007

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

30ns

JESD-609 Code :

e1

Package / Case :

DirectFET™ Isometric MT

JESD-30 Code :

R-XBCC-N3

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

180A

ECCN Code :

EAR99

Length :

6.35mm

Fall Time (Typ) :

17 ns

Transistor Application :

SWITCHING

Turn-Off Delay Time :

25 ns

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

32A

Number of Pins :

5

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

6140pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Series :

HEXFET®

Operating Temperature :

-40°C~150°C TJ

Avalanche Energy Rating (Eas) :

260 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.8W Ta 89W Tc

Height :

506μm

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 32A, 10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Width :

5.05mm

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Drain-source On Resistance-Max :

0.0017Ohm

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1