IRF6725MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

28A

Power Dissipation-Max :

2.8W Ta 100W Tc

JESD-30 Code :

R-XBCC-N3

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

28A Ta 170A Tc

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Threshold Voltage :

1.8V

Number of Terminations :

3

Terminal Position :

BOTTOM

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 15V

Pulsed Drain Current-Max (IDM) :

220A

Turn On Delay Time :

16 ns

Drain-source On Resistance-Max :

0.0022Ohm

Avalanche Energy Rating (Eas) :

190 mJ

Radiation Hardening :

No

Nominal Vgs :

1.8 V

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Height :

506μm

Number of Pins :

5

Rise Time :

22ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

19 ns

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 4.5V

Packaging :

Tape and Reel (TR)

Length :

6.35mm

Vgs (Max) :

±20V

Width :

5.05mm

Continuous Drain Current (ID) :

170A

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Factory Lead Time :

17 Weeks

Power Dissipation :

100W

Published :

2004

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 28A, 10V

Fall Time (Typ) :

13 ns

FET Type :

N-Channel

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

DirectFET™ Isometric MX

Case Connection :

DRAIN