IRF6725MTR1PBF
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- Mfr.Part #
- IRF6725MTR1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MX
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 28A DIRECTFET
- Stock
- 2,771
- In Stock ：
- 2,771
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2007
- Threshold Voltage :
- 1.8V
- Power Dissipation :
- 2.8W
- Series :
- HEXFET®
- Number of Pins :
- 7
- Fall Time (Typ) :
- 13 ns
- Nominal Vgs :
- 1.8 V
- Rise Time :
- 22ns
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- Single
- Operating Temperature :
- -40°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Package / Case :
- DirectFET™ Isometric MX
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 2.35V @ 100μA
- Continuous Drain Current (ID) :
- 28A
- Drain to Source Breakdown Voltage :
- 30V
- Turn On Delay Time :
- 16 ns
- Packaging :
- Tape and Reel (TR)
- Termination :
- SMD/SMT
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Length :
- 6.35mm
- Current - Continuous Drain (Id) @ 25°C :
- 28A Ta 170A Tc
- Resistance :
- 2.2MOhm
- Mount :
- Surface Mount
- Dual Supply Voltage :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 4.5V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Recovery Time :
- 41 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 506μm
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 19 ns
- Power Dissipation-Max :
- 2.8W Ta 100W Tc
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±20V
- Width :
- 5.05mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 15V
- Rds On (Max) @ Id, Vgs :
- 2.2m Ω @ 28A, 10V
- Datasheets
- IRF6725MTR1PBF
N-Channel Tape & Reel (TR) 2.2m Ω @ 28A, 10V ±20V 4700pF @ 15V 54nC @ 4.5V DirectFET™ Isometric MX
IRF6725MTR1PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4700pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 28A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.8V, which means that it will not activate any of its functions when its threshold voltage reaches 1.8V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRF6725MTR1PBF Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns
a threshold voltage of 1.8V
IRF6725MTR1PBF Applications
There are a lot of Infineon Technologies
IRF6725MTR1PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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