IRF6724MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e1

Power Dissipation :

89W

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

5

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

12 mJ

Factory Lead Time :

12 Weeks

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Width :

5.05mm

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Turn On Delay Time :

11 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

27A Ta 150A Tc

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 27A, 10V

Rise Time :

19ns

Drain to Source Breakdown Voltage :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

23 ns

Length :

6.35mm

ECCN Code :

EAR99

Package / Case :

DirectFET™ Isometric MX

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

212A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Fall Time (Typ) :

16 ns

JESD-30 Code :

R-XBCC-N3

Number of Elements :

1

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 4.5V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Lead Free :

Lead Free

Continuous Drain Current (ID) :

27A

Mount :

Surface Mount

Radiation Hardening :

No

Published :

2009

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4404pF @ 15V

Height :

506μm

Power Dissipation-Max :

2.8W Ta 89W Tc

Terminal Position :

BOTTOM