IRF6722MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

82 mJ

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

2.3W Ta 42W Tc

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

13A Ta 56A Tc

Continuous Drain Current (ID) :

13A

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Length :

6.35mm

Factory Lead Time :

12 Weeks

Number of Elements :

1

Package / Case :

DirectFET™ Isometric MP

Turn On Delay Time :

11 ns

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Height :

506μm

Fall Time (Typ) :

6.1 ns

Turn-Off Delay Time :

9.5 ns

JESD-609 Code :

e1

Drain-source On Resistance-Max :

0.0077Ohm

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Published :

2007

Number of Pins :

5

Packaging :

Tape and Reel (TR)

Rise Time :

7.8ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

Number of Terminations :

3

ECCN Code :

EAR99

Power Dissipation :

42W

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

7.7m Ω @ 13A, 10V

JESD-30 Code :

R-XBCC-N3

Operating Temperature :

-40°C~150°C TJ

Mount :

Surface Mount

Width :

5.05mm

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V