IRF6715MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.8W Ta 78W Tc

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

5340pF @ 13V

FET Type :

N-Channel

Height :

506μm

Continuous Drain Current (ID) :

34A

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

12 ns

Power Dissipation :

2.8W

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 34A, 10V

Package / Case :

DirectFET™ Isometric MX

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 4.5V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

7

Terminal Position :

BOTTOM

Drain to Source Breakdown Voltage :

25V

Rise Time :

31ns

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

34A Ta 180A Tc

Vgs(th) (Max) @ Id :

2.4V @ 100μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

20 ns

Operating Temperature :

-40°C~150°C TJ

Avalanche Energy Rating (Eas) :

200 mJ

Series :

HEXFET®

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Mounting Type :

Surface Mount

Length :

6.35mm

JESD-609 Code :

e1

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

16 ns

Radiation Hardening :

No

Width :

5.05mm

JESD-30 Code :

R-XBCC-N3

Transistor Element Material :

SILICON

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Published :

2011