IRF6713STRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.003Ohm

Rise Time :

13ns

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-40°C~150°C TJ

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-XBCC-N2

Continuous Drain Current (ID) :

22A

Turn On Delay Time :

12 ns

Packaging :

Tape and Reel (TR)

Number of Pins :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Package / Case :

DirectFET™ Isometric SQ

Contact Plating :

Copper, Silver, Tin

Turn-Off Delay Time :

9.2 ns

Power Dissipation :

42W

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

506μm

Length :

4.826mm

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 13V

Avalanche Energy Rating (Eas) :

34 mJ

Factory Lead Time :

15 Weeks

Current - Continuous Drain (Id) @ 25°C :

22A Ta 95A Tc

Vgs (Max) :

±20V

Fall Time (Typ) :

6 ns

Mounting Type :

Surface Mount

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3m Ω @ 22A, 10V

Power Dissipation-Max :

2.2W Ta 42W Tc

Drain to Source Breakdown Voltage :

25V

Width :

3.95mm

Vgs(th) (Max) @ Id :

2.4V @ 50μA

RoHS Status :

RoHS Compliant

Number of Elements :

1

Mount :

Surface Mount

Transistor Element Material :

SILICON

Series :

HEXFET®

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Published :

2008