IRF6710S2TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

12A

RoHS Status :

RoHS Compliant

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

6

Dual Supply Voltage :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

21 ns

Fall Time (Typ) :

6 ns

Current - Continuous Drain (Id) @ 25°C :

12A Ta 37A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

20ns

Mounting Type :

Surface Mount

Drain to Source Resistance :

11.9mOhm

Published :

2008

Power Dissipation-Max :

1.8W Ta 15W Tc

REACH SVHC :

No SVHC

Number of Elements :

1

Turn On Delay Time :

7.9 ns

Input Capacitance :

1.19nF

Resistance :

5.9mOhm

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Termination :

Through Hole

Package / Case :

DirectFET™ Isometric S1

Power Dissipation :

1.8W

Height :

558.8μm

Length :

4.826mm

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 13V

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Supplier Device Package :

DIRECTFET S1

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

5.9mOhm @ 12A, 10V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Turn-Off Delay Time :

5.2 ns

Drain to Source Voltage (Vdss) :

25V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

25V

Threshold Voltage :

1.8V

Min Operating Temperature :

-55°C

Width :

3.95mm

FET Type :

N-Channel

Max Operating Temperature :

175°C

Nominal Vgs :

1.8 V

Rds On Max :

5.9 mΩ

Lead Free :

Lead Free

Vgs (Max) :

±20V