IRF6709S2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

1.01nF

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Published :

2009

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

25V

Drain to Source Breakdown Voltage :

25V

Length :

4.826mm

Package / Case :

DirectFET™ Isometric S1

Max Operating Temperature :

175°C

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

7.8mOhm @ 12A, 10V

Rise Time :

25ns

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Copper, Silver, Tin

Input Capacitance (Ciss) (Max) @ Vds :

1010pF @ 13V

Number of Pins :

5

Fall Time (Typ) :

9.5 ns

Radiation Hardening :

No

Supplier Device Package :

DIRECTFET S1

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

12A Ta 39A Tc

Power Dissipation-Max :

1.8W Ta 21W Tc

Width :

3.95mm

Continuous Drain Current (ID) :

12A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

9.1 ns

Turn On Delay Time :

8.4 ns

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.35V @ 25µA

FET Type :

N-Channel

Series :

HEXFET®

Drain to Source Resistance :

13.5mOhm

Height :

558.8μm

Power Dissipation :

21W

Rds On Max :

3.8 mΩ

Mounting Type :

Surface Mount