IRF6674TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

60V

Recovery Time :

48 ns

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Min Operating Temperature :

-40°C

Rds On (Max) @ Id, Vgs :

11mOhm @ 13.4A, 10V

Mount :

Surface Mount

Supplier Device Package :

DIRECTFET™ MZ

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Rds On Max :

11 mΩ

Input Capacitance :

1.35nF

Height :

533.4μm

Nominal Vgs :

4 V

Dual Supply Voltage :

60V

Fall Time (Typ) :

8.7 ns

Termination :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

13.4A Ta 67A Tc

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

7 ns

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

13.4A

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Power Dissipation :

3.6W

Turn-Off Delay Time :

12 ns

Width :

5.05mm

Operating Temperature :

-40°C~150°C TJ

Number of Pins :

7

Drain to Source Resistance :

9mOhm

Vgs (Max) :

±20V

Power Dissipation-Max :

3.6W Ta 89W Tc

Drain to Source Voltage (Vdss) :

60V

Vgs(th) (Max) @ Id :

4.9V @ 100μA

Element Configuration :

Dual

Rise Time :

12ns

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Package / Case :

DirectFET™ Isometric MZ

Length :

6.35mm