IRF6668TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.8W Ta 89W Tc

Number of Elements :

1

Fall Time (Typ) :

23 ns

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1320pF @ 25V

Input Capacitance :

1.32nF

Width :

5.05mm

Threshold Voltage :

4V

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Min Operating Temperature :

-40°C

Published :

2006

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Drain to Source Voltage (Vdss) :

80V

Number of Pins :

5

Turn On Delay Time :

19 ns

Vgs (Max) :

±20V

Drain to Source Resistance :

12mOhm

Resistance :

15mOhm

Continuous Drain Current (ID) :

44A

Current Rating :

55A

Vgs(th) (Max) @ Id :

4.9V @ 100μA

REACH SVHC :

No SVHC

Length :

6.35mm

Dual Supply Voltage :

80V

Packaging :

Tape and Reel (TR)

Nominal Vgs :

4 V

Element Configuration :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Voltage - Rated DC :

80V

Rise Time :

13ns

Rds On (Max) @ Id, Vgs :

15mOhm @ 12A, 10V

Radiation Hardening :

No

Power Dissipation :

2.8W

Max Operating Temperature :

150°C

Rds On Max :

15 mΩ

Height :

533.4μm

RoHS Status :

RoHS Compliant

Package / Case :

DirectFET™ Isometric MZ

Operating Temperature :

-40°C~150°C TJ

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

80V

Turn-Off Delay Time :

7.1 ns

Supplier Device Package :

DIRECTFET™ MZ