IRF6665TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Height :

506μm

Packaging :

Tape and Reel (TR)

Operating Temperature :

-40°C~150°C TJ

Threshold Voltage :

3V

Package / Case :

DirectFET™ Isometric SH

Resistance :

62mOhm

Number of Pins :

5

Power Dissipation :

42W

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Min Operating Temperature :

-40°C

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Rds On Max :

62 mΩ

Termination :

SMD/SMT

Power Dissipation-Max :

2.2W Ta 42W Tc

Dual Supply Voltage :

100V

Supplier Device Package :

DIRECTFET™ SH

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta 19A Tc

Fall Time (Typ) :

4.3 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

4.2A

Input Capacitance :

530pF

Continuous Drain Current (ID) :

3.4A

Turn-Off Delay Time :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

4.826mm

Lead Free :

Lead Free

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

62mOhm @ 5A, 10V

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

100V

Mounting Type :

Surface Mount

Published :

2006

Series :

HEXFET®

Width :

3.95mm

Drain to Source Resistance :

62mOhm

Voltage - Rated DC :

100V

Number of Elements :

1

Turn On Delay Time :

7.4 ns

REACH SVHC :

No SVHC

Max Operating Temperature :

150°C

Vgs (Max) :

±20V

Rise Time :

2.8ns

Nominal Vgs :

3 V