IRF6665TR1
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- Mfr.Part #
- IRF6665TR1
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric SH
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 4.2A DIRECTFET
- Stock
- 5,662
- In Stock ：
- 5,662
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- DirectFET™ Isometric SH
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 4.2A Ta 19A Tc
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Published :
- 2005
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 6
- Power Dissipation-Max :
- 2.2W Ta 42W Tc
- Drain to Source Breakdown Voltage :
- 100V
- Power Dissipation :
- 42W
- Turn On Delay Time :
- 7.4 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 4.2A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -40°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- JESD-609 Code :
- e0
- Rise Time :
- 2.8ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Fall Time (Typ) :
- 4.3 ns
- Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 62m Ω @ 5A, 10V
- Drain Current-Max (Abs) (ID) :
- 19A
- Input Capacitance (Ciss) (Max) @ Vds :
- 530pF @ 25V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Turn-Off Delay Time :
- 14 ns
- Datasheets
- IRF6665TR1
N-Channel Tape & Reel (TR) 62m Ω @ 5A, 10V ±20V 530pF @ 25V 13nC @ 10V DirectFET™ Isometric SH
IRF6665TR1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 530pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.2A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.19A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 14 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.4 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
IRF6665TR1 Features
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 14 ns
IRF6665TR1 Applications
There are a lot of Infineon Technologies
IRF6665TR1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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