IRF6665

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-XBCC-N3

Pulsed Drain Current-Max (IDM) :

34A

Power Dissipation-Max :

2.2W Ta 42W Tc

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Avalanche Energy Rating (Eas) :

11 mJ

Vgs (Max) :

±20V

Surface Mount :

yes

Terminal Finish :

Silver/Nickel (Ag/Ni)

Packaging :

Tube

RoHS Status :

Non-RoHS Compliant

Published :

2005

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Voltage (Vdss) :

100V

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

100V

Terminal Position :

BOTTOM

Operating Temperature :

-40°C~150°C TJ

Case Connection :

DRAIN

Terminal Form :

NO LEAD

Rds On (Max) @ Id, Vgs :

62m Ω @ 5A, 10V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

High Reliability

Mounting Type :

Surface Mount

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

4.2A

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta 19A Tc

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

JESD-609 Code :

e4

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Drain-source On Resistance-Max :

0.062Ohm

Package / Case :

DirectFET™ Isometric SH