IRF6655TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.8V @ 25μA

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

62mOhm @ 5A, 10V

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

11.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta 19A Tc

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Published :

2005

Drain to Source Breakdown Voltage :

100V

Continuous Drain Current (ID) :

4.2A

Width :

3.95mm

Series :

HEXFET®

Resistance :

62mOhm

Input Capacitance :

530pF

Vgs (Max) :

±20V

Height :

506μm

Radiation Hardening :

No

Rise Time :

2.8ns

Element Configuration :

Single

Min Operating Temperature :

-40°C

REACH SVHC :

No SVHC

Nominal Vgs :

4 V

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

14 ns

FET Type :

N-Channel

Power Dissipation :

42W

Mount :

Surface Mount

Drain to Source Resistance :

53mOhm

Supplier Device Package :

DIRECTFET™ SH

Rds On Max :

62 mΩ

Fall Time (Typ) :

4.3 ns

Drain to Source Voltage (Vdss) :

100V

Length :

4.826mm

Package / Case :

DirectFET™ Isometric SH

Number of Pins :

5

Power Dissipation-Max :

2.2W Ta 42W Tc

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

7.4 ns