IRF6648TRPBF

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Mfr.Part #
IRF6648TRPBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric MN
Datasheet
Download
Description
MOSFET N-CH 60V 86A DIRECTFET MN
Stock
20,068
In Stock :
20,068

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2006
Continuous Drain Current (ID) :
86mA
Operating Temperature :
-40°C~150°C TJ
Number of Pins :
5
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Width :
5.05mm
Avalanche Energy Rating (Eas) :
47 mJ
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
4.9V @ 150μA
Vgs (Max) :
±20V
Factory Lead Time :
12 Weeks
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Series :
HEXFET®
Lead Free :
Lead Free
Height :
508μm
Terminal Position :
BOTTOM
FET Type :
N-Channel
Mounting Type :
Surface Mount
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max :
2.8W Ta 89W Tc
Turn On Delay Time :
16 ns
Additional Feature :
LOW CONDUCTION LOSS
Drain-source On Resistance-Max :
0.007Ohm
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
7m Ω @ 17A, 10V
Turn-Off Delay Time :
28 ns
REACH SVHC :
No SVHC
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
13 ns
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Transistor Application :
SWITCHING
Current Rating :
86A
Radiation Hardening :
No
Package / Case :
DirectFET™ Isometric MN
Power Dissipation :
89W
Number of Elements :
1
Number of Terminations :
3
Length :
5.45mm
Rise Time :
29ns
JESD-30 Code :
R-XBCC-N3
Voltage - Rated DC :
60V
JESD-609 Code :
e1
Pulsed Drain Current-Max (IDM) :
260A
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
2120pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
86A Tc
Drain to Source Breakdown Voltage :
60V
Case Connection :
DRAIN
Threshold Voltage :
4V
Datasheets
IRF6648TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6648TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Number of Pins:5, Mounting Type:Surface Mount, Package / Case:DirectFET™ Isometric MN, Number of Terminations:3, IRF6648TRPBF pinout, IRF6648TRPBF datasheet PDF, IRF6648TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6648TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6648TRPBF


N-Channel Tape & Reel (TR) 7m Ω @ 17A, 10V ±20V 2120pF @ 25V 50nC @ 10V DirectFET™ Isometric MN

IRF6648TRPBF Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 47 mJ.The maximum input capacitance of this device is 2120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 86mA.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 260A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 16 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

IRF6648TRPBF Features


the avalanche energy rating (Eas) is 47 mJ
a continuous drain current (ID) of 86mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 260A.
a threshold voltage of 4V


IRF6648TRPBF Applications


There are a lot of Infineon Technologies
IRF6648TRPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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