IRF6648TR1
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- Mfr.Part #
- IRF6648TR1
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 86A DIRECTFET MN
- Stock
- 4,453
- In Stock ：
- 4,453
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 29ns
- Dual Supply Voltage :
- 60V
- REACH SVHC :
- No SVHC
- Nominal Vgs :
- 4 V
- Rds On (Max) @ Id, Vgs :
- 7mOhm @ 17A, 10V
- Termination :
- SMD/SMT
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -40°C
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Power Dissipation-Max :
- 2.8W Ta 89W Tc
- Package / Case :
- DirectFET™ Isometric MN
- Current Rating :
- 86A
- Number of Pins :
- 7
- Turn On Delay Time :
- 16 ns
- RoHS Status :
- Non-RoHS Compliant
- Series :
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 86A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2120pF @ 25V
- Lead Free :
- Contains Lead
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On Max :
- 7 mΩ
- Drain to Source Voltage (Vdss) :
- 60V
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Operating Temperature :
- -40°C~150°C TJ
- Continuous Drain Current (ID) :
- 86A
- Reverse Recovery Time :
- 31 ns
- Drain to Source Resistance :
- 2MOhm
- Supplier Device Package :
- DIRECTFET™ MN
- Drain to Source Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- Input Capacitance :
- 2.12nF
- Max Operating Temperature :
- 150°C
- Published :
- 2006
- Mount :
- Surface Mount
- Power Dissipation :
- 2.8W
- Threshold Voltage :
- 4V
- Fall Time (Typ) :
- 13 ns
- Vgs(th) (Max) @ Id :
- 4.9V @ 150μA
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 28 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IRF6648TR1
N-Channel Tape & Reel (TR) 7mOhm @ 17A, 10V ±20V 2120pF @ 25V 50nC @ 10V 60V DirectFET™ Isometric MN
IRF6648TR1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2120pF @ 25V.This device conducts a continuous drain current (ID) of 86A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 28 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 2MOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF6648TR1 Features
a continuous drain current (ID) of 86A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 28 ns
single MOSFETs transistor is 2MOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)
IRF6648TR1 Applications
There are a lot of Infineon Technologies
IRF6648TR1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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