IRF6644TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Pins :

5

Rise Time :

26ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-40°C~150°C TJ

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Package / Case :

DirectFET™ Isometric MN

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

4.8V @ 150μA

Fall Time (Typ) :

16 ns

Avalanche Energy Rating (Eas) :

86 mJ

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

10.3A Ta 60A Tc

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

JESD-609 Code :

e1

Threshold Voltage :

4.8V

Power Dissipation-Max :

2.8W Ta 89W Tc

Packaging :

Tape and Reel (TR)

Current Rating :

10.3A

JESD-30 Code :

R-XBCC-N3

Width :

5.0546mm

Rds On (Max) @ Id, Vgs :

13m Ω @ 10.3A, 10V

Additional Feature :

LOW CONDUCTION LOSS

Nominal Vgs :

4.8 V

Drain to Source Breakdown Voltage :

100V

Voltage - Rated DC :

100V

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

8.3A

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Published :

2006

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

228A

Transistor Element Material :

SILICON

Length :

6.35mm

Number of Elements :

1

Height :

508μm

Power Dissipation :

89W

Turn On Delay Time :

17 ns

Case Connection :

DRAIN

Turn-Off Delay Time :

34 ns

Mount :

Surface Mount