IRF6644TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

228A

Turn On Delay Time :

17 ns

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

13m Ω @ 10.3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Number of Elements :

1

Current Rating :

10.3A

Termination :

SMD/SMT

Height :

506μm

Drain to Source Breakdown Voltage :

100V

Length :

6.35mm

JESD-30 Code :

R-XBCC-N3

Package / Case :

DirectFET™ Isometric MN

Width :

5.05mm

Element Configuration :

Single

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

REACH SVHC :

No SVHC

Operating Temperature :

-40°C~150°C TJ

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Dual Supply Voltage :

100V

Power Dissipation :

2.8W

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

16 ns

Series :

HEXFET®

Continuous Drain Current (ID) :

8.3A

Vgs(th) (Max) @ Id :

4.8V @ 150μA

Voltage - Rated DC :

100V

Current - Continuous Drain (Id) @ 25°C :

10.3A Ta 60A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

63 ns

Published :

2005

Vgs (Max) :

±20V

Resistance :

13mOhm

Additional Feature :

LOW CONDUCTION LOSS

Number of Pins :

5

Avalanche Energy Rating (Eas) :

86 mJ

Threshold Voltage :

2.8V

Transistor Element Material :

SILICON

Nominal Vgs :

2.8 V

Turn-Off Delay Time :

34 ns

Rise Time :

26ns

Power Dissipation-Max :

2.8W Ta 89W Tc