IRF6644

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

HTS Code :

8541.29.00.95

Series :

HEXFET®

Number of Terminations :

3

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

82A

Transistor Application :

SWITCHING

Terminal Form :

NO LEAD

Drain-source On Resistance-Max :

0.013Ohm

Published :

2005

DS Breakdown Voltage-Min :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e4

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Elements :

1

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Case Connection :

DRAIN

Package / Case :

DirectFET™ Isometric MN

FET Type :

N-Channel

JESD-30 Code :

R-XBCC-N3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

13m Ω @ 10.3A, 10V

Power Dissipation-Max :

2.8W Ta 89W Tc

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

100V

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Silver/Nickel (Ag/Ni)

Current - Continuous Drain (Id) @ 25°C :

10.3A Ta 60A Tc

Avalanche Energy Rating (Eas) :

220 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-40°C~150°C TJ

Drain Current-Max (Abs) (ID) :

10.3A

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4.8V @ 150μA