IRF6641TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

200V

Power Dissipation :

89W

Package / Case :

DirectFET™ Isometric MZ

Published :

2007

Number of Elements :

1

Number of Pins :

5

Termination :

SMD/SMT

Turn-Off Delay Time :

31 ns

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta 26A Tc

Power Dissipation-Max :

2.8W Ta 89W Tc

Fall Time (Typ) :

6.5 ns

Min Operating Temperature :

-40°C

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 25V

Continuous Drain Current (ID) :

3.7A

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Dual Supply Voltage :

200V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

200V

Series :

HEXFET®

Recovery Time :

130 ns

Mounting Type :

Surface Mount

Rise Time :

11ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

4.6A

Supplier Device Package :

DIRECTFET™ MZ

FET Type :

N-Channel

Nominal Vgs :

4 V

Height :

506μm

Element Configuration :

Single

Max Operating Temperature :

150°C

Packaging :

Cut Tape (CT)

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

59.9 mΩ

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

REACH SVHC :

No SVHC

Voltage - Rated DC :

200V

Turn On Delay Time :

16 ns

Vgs(th) (Max) @ Id :

4.9V @ 150μA

Input Capacitance :

2.29nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drain to Source Resistance :

59.9mOhm

Length :

6.35mm

Width :

5.05mm

Operating Temperature :

-40°C~150°C TJ

Threshold Voltage :

4V

Rds On (Max) @ Id, Vgs :

59.9mOhm @ 5.5A, 10V