IRF6638TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Operating Temperature :

-40°C~150°C TJ

FET Type :

N-Channel

Length :

6.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Rise Time :

45ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 25A, 10V

Height :

506μm

JESD-609 Code :

e1

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.8W Ta 89W Tc

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Lead Free :

Lead Free

Current Rating :

25A

Avalanche Energy Rating (Eas) :

37 mJ

Current - Continuous Drain (Id) @ 25°C :

25A Ta 140A Tc

Number of Terminations :

3

Turn-Off Delay Time :

28 ns

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 4.5V

Turn On Delay Time :

19 ns

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN SILVER COPPER

Number of Pins :

5

Package / Case :

DirectFET™ Isometric MX

Configuration :

SINGLE WITH BUILT-IN DIODE

Voltage - Rated DC :

30V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Width :

5.05mm

Drain-source On Resistance-Max :

0.0029Ohm

Series :

HEXFET®

Power Dissipation :

89W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

20A

Mount :

Surface Mount

JESD-30 Code :

R-XBCC-N3

Case Connection :

DRAIN

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

200A

Drain to Source Breakdown Voltage :

30V

Terminal Position :

BOTTOM

Input Capacitance (Ciss) (Max) @ Vds :

3770pF @ 15V

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

6.2 ns

Published :

2006

Radiation Hardening :

No