IRF6636TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

506μm

JESD-30 Code :

R-XBCC-N3

Number of Terminations :

3

Threshold Voltage :

2.45V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Package / Case :

DirectFET™ Isometric ST

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

2420pF @ 10V

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 18A, 10V

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

28 mJ

Length :

4.826mm

Mount :

Surface Mount

Voltage - Rated DC :

20V

Published :

2006

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

15A

Rise Time :

19ns

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Transistor Application :

SWITCHING

Number of Pins :

5

Current Rating :

18A

Operating Temperature :

-40°C~150°C TJ

Power Dissipation-Max :

2.2W Ta 42W Tc

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

18A Ta 81A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

6.2 ns

Width :

3.95mm

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Series :

HEXFET®

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

16 ns

Turn On Delay Time :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

42W

Transistor Element Material :

SILICON

Number of Elements :

1