IRF6636TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Voltage - Rated DC :

20V

Vgs (Max) :

±20V

Terminal Position :

BOTTOM

Height :

506μm

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Mount :

Surface Mount

Series :

HEXFET®

REACH SVHC :

No SVHC

Power Dissipation-Max :

2.2W Ta 42W Tc

Avalanche Energy Rating (Eas) :

28 mJ

Width :

3.95mm

Packaging :

Tape and Reel (TR)

Current Rating :

18A

Number of Pins :

5

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 18A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

18A Ta 81A Tc

JESD-30 Code :

R-XBCC-N3

Continuous Drain Current (ID) :

15A

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Package / Case :

DirectFET™ Isometric ST

Length :

4.826mm

Number of Elements :

1

Radiation Hardening :

No

Turn On Delay Time :

14 ns

Published :

2006

Fall Time (Typ) :

6.2 ns

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Rise Time :

19ns

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2420pF @ 10V

Drain to Source Breakdown Voltage :

20V

Case Connection :

DRAIN

Operating Temperature :

-40°C~150°C TJ

Power Dissipation :

42W

Turn-Off Delay Time :

16 ns

Threshold Voltage :

2.45V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.45V @ 250μA