IRF6635

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Published :

2005

Terminal Finish :

Silver/Nickel (Ag/Ni)

Power Dissipation-Max :

2.8W Ta 89W Tc

Number of Elements :

1

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Avalanche Energy Rating (Eas) :

200 mJ

Drain-source On Resistance-Max :

0.0018Ohm

Current - Continuous Drain (Id) @ 25°C :

32A Ta 180A Tc

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Series :

HEXFET®

Package / Case :

DirectFET™ Isometric MX

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

3

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

5970pF @ 15V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 32A, 10V

JESD-609 Code :

e4

Pulsed Drain Current-Max (IDM) :

250A

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

NO LEAD

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

32A

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.35V @ 250μA

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-XBCC-N3