IRF6633TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Power Dissipation :

89W

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 10V

Drain to Source Breakdown Voltage :

20V

Mounting Type :

Surface Mount

Length :

6.35mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e1

Power Dissipation-Max :

2.3W Ta 89W Tc

Voltage - Rated DC :

20V

Drain Current-Max (Abs) (ID) :

59A

Terminal Finish :

TIN SILVER COPPER

Width :

5.05mm

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Continuous Drain Current (ID) :

16mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

16A Ta 59A Tc

Number of Elements :

1

Height :

676μm

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Resistance :

5.6MOhm

Case Connection :

DRAIN

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

RoHS Status :

RoHS Compliant

Current Rating :

16A

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Turn-Off Delay Time :

12 ns

Transistor Element Material :

SILICON

Series :

HEXFET®

Package / Case :

DirectFET™ Isometric MP

Turn On Delay Time :

9.7 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 16A, 10V

Rise Time :

31ns

Fall Time (Typ) :

4.3 ns

Operating Temperature :

-40°C~150°C TJ

Published :

2006

Lead Free :

Lead Free