IRF6631TRPBF
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- Mfr.Part #
- IRF6631TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric SQ
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13A DIRECTFET
- Stock
- 12,904
- In Stock ：
- 12,904
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- BOTTOM
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 4.5V
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2.35V @ 25µA
- RoHS Status :
- RoHS Compliant
- Published :
- 2006
- Power Dissipation-Max :
- 2.2W Ta 42W Tc
- Rise Time :
- 18ns
- Transistor Application :
- SWITCHING
- Width :
- 3.95mm
- Additional Feature :
- LOW CONDUCTION LOSS
- Operating Temperature :
- -40°C~150°C TJ
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 10A
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1450pF @ 15V
- Turn On Delay Time :
- 15 ns
- Length :
- 4.826mm
- JESD-30 Code :
- R-XBCC-N3
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta 57A Tc
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 42W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 7.8m Ω @ 13A, 10V
- Current Rating :
- 13A
- Package / Case :
- DirectFET™ Isometric SQ
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 4.9 ns
- Height :
- 506μm
- Nominal Vgs :
- 1.8 V
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 30V
- Vgs (Max) :
- ±20V
- Series :
- HEXFET®
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Number of Pins :
- 5
- Threshold Voltage :
- 1.8V
- Turn-Off Delay Time :
- 18 ns
- Drain-source On Resistance-Max :
- 0.0078Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- IRF6631TRPBF
N-Channel Tape & Reel (TR) 7.8m Ω @ 13A, 10V ±20V 1450pF @ 15V 18nC @ 4.5V DirectFET™ Isometric SQ
IRF6631TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1450pF @ 15V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 18 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1.8V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRF6631TRPBF Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
a threshold voltage of 1.8V
IRF6631TRPBF Applications
There are a lot of Infineon Technologies
IRF6631TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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