IRF6626TR1PBF
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- Mfr.Part #
- IRF6626TR1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric ST
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 16A DIRECTFET
- Stock
- 6,500
- In Stock ：
- 6,500
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Height :
- 506μm
- Turn-Off Delay Time :
- 17 ns
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 42W
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation-Max :
- 2.2W Ta 42W Tc
- Number of Pins :
- 5
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 2380pF @ 15V
- Rise Time :
- 15ns
- Published :
- 2006
- Drain to Source Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2.35V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Supplier Device Package :
- DIRECTFET™ ST
- Series :
- HEXFET®
- Vgs (Max) :
- ±20V
- Drain to Source Resistance :
- 7.1mOhm
- Turn On Delay Time :
- 13 ns
- Min Operating Temperature :
- -40°C
- Package / Case :
- DirectFET™ Isometric ST
- Continuous Drain Current (ID) :
- 13A
- Rds On Max :
- 5.4 mΩ
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 5.4mOhm @ 16A, 10V
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 30V
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Resistance :
- 5.4mOhm
- Length :
- 4.826mm
- Width :
- 3.95mm
- Nominal Vgs :
- 2.35 V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta 72A Tc
- Input Capacitance :
- 2.38nF
- Operating Temperature :
- -40°C~150°C TJ
- Current Rating :
- 16A
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 4.5V
- Fall Time (Typ) :
- 4.5 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IRF6626TR1PBF
N-Channel Tape & Reel (TR) 5.4mOhm @ 16A, 10V ±20V 2380pF @ 15V 29nC @ 4.5V 30V DirectFET™ Isometric ST
IRF6626TR1PBF Overview
A device's maximum input capacitance is 2380pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 13A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 17 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 7.1mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRF6626TR1PBF Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 7.1mOhm
a 30V drain to source voltage (Vdss)
IRF6626TR1PBF Applications
There are a lot of Infineon Technologies
IRF6626TR1PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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