IRF6626

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Published :

2005

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

130A

JESD-30 Code :

R-XBCC-N3

RoHS Status :

Non-RoHS Compliant

Package / Case :

DirectFET™ Isometric ST

Case Connection :

DRAIN

Power Dissipation-Max :

2.2W Ta 42W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2380pF @ 15V

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-40°C~150°C TJ

Drain-source On Resistance-Max :

0.0054Ohm

Avalanche Energy Rating (Eas) :

24 mJ

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

5.4m Ω @ 16A, 10V

Transistor Application :

SWITCHING

Terminal Form :

NO LEAD

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Surface Mount :

yes

FET Type :

N-Channel

JESD-609 Code :

e1

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

16A Ta 72A Tc

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

16A

Configuration :

SINGLE WITH BUILT-IN DIODE