IRF6623

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

120A

Avalanche Energy Rating (Eas) :

43 mJ

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

2.2V @ 250µA

ECCN Code :

EAR99

JESD-30 Code :

R-XBCC-N3

Case Connection :

DRAIN

Terminal Form :

NO LEAD

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

FET Type :

N-Channel

Surface Mount :

yes

Published :

2005

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

16A

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain-source On Resistance-Max :

0.0057Ohm

Series :

HEXFET®

JESD-609 Code :

e4

Current - Continuous Drain (Id) @ 25°C :

16A Ta 55A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 10V

DS Breakdown Voltage-Min :

20V

Number of Elements :

1

Package / Case :

DirectFET™ Isometric ST

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 15A, 10V

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Power Dissipation-Max :

1.4W Ta 42W Tc

Terminal Finish :

Silver/Nickel (Ag/Ni)