IRF6621TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

16 ns

Number of Elements :

1

Operating Temperature :

-40°C~150°C TJ

Package / Case :

DirectFET™ Isometric SQ

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Current Rating :

12A

Radiation Hardening :

No

Nominal Vgs :

1.8 V

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Input Capacitance :

1.46nF

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

20V

Power Dissipation-Max :

2.2W Ta 42W Tc

Height :

506μm

Length :

4.826mm

Rise Time :

14ns

Number of Pins :

5

Min Operating Temperature :

-40°C

Mounting Type :

Surface Mount

Power Dissipation :

42W

Turn On Delay Time :

12 ns

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

9.1mOhm @ 12A, 10V

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

12A Ta 55A Tc

Threshold Voltage :

1.8V

Rds On Max :

9.1 mΩ

Fall Time (Typ) :

4.1 ns

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

17.5nC @ 4.5V

Supplier Device Package :

DIRECTFET™ SQ

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

Width :

3.95mm

Published :

2006

Series :

HEXFET®

Drain to Source Resistance :

12.1mOhm

Continuous Drain Current (ID) :

9.6A

Drain to Source Breakdown Voltage :

30V