IRF6616TRPBF
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- Mfr.Part #
- IRF6616TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MX
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 19A DIRECTFET
- Stock
- 27,525
- In Stock ：
- 27,525
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 19A
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 4.5V
- Factory Lead Time :
- 12 Weeks
- Vgs (Max) :
- ±20V
- Height :
- 508μm
- REACH SVHC :
- No SVHC
- Terminal Position :
- BOTTOM
- Continuous Drain Current (ID) :
- 15A
- Length :
- 6.35mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Threshold Voltage :
- 1.8V
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 15 ns
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -40°C~150°C TJ
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- DirectFET™ Isometric MX
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 3765pF @ 20V
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta 106A Tc
- Number of Elements :
- 1
- JESD-30 Code :
- R-XBCC-N3
- Fall Time (Typ) :
- 4.4 ns
- Series :
- HEXFET®
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 40V
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 19A, 10V
- Turn-Off Delay Time :
- 21 ns
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 2.8W Ta 89W Tc
- Width :
- 5.0546mm
- Rise Time :
- 19ns
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.25V @ 250μA
- Power Dissipation :
- 89W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 36 mJ
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Published :
- 2007
- Voltage - Rated DC :
- 30V
- Number of Pins :
- 5
- Datasheets
- IRF6616TRPBF
N-Channel Tape & Reel (TR) 5m Ω @ 19A, 10V ±20V 3765pF @ 20V 44nC @ 4.5V DirectFET™ Isometric MX
IRF6616TRPBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 36 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3765pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 15A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.8V, which means that it will not activate any of its functions when its threshold voltage reaches 1.8V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRF6616TRPBF Features
the avalanche energy rating (Eas) is 36 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 21 ns
a threshold voltage of 1.8V
IRF6616TRPBF Applications
There are a lot of Infineon Technologies
IRF6616TRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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