IRF6616TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

1.8V

Power Dissipation-Max :

2.8W Ta 89W Tc

Recovery Time :

23 ns

Turn-Off Delay Time :

21 ns

Length :

6.35mm

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

19A Ta 106A Tc

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Rise Time :

19ns

Input Capacitance :

3.765nF

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

5mOhm @ 19A, 10V

Min Operating Temperature :

-40°C

Termination :

SMD/SMT

Power Dissipation :

2.8W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

4.4 ns

Dual Supply Voltage :

40V

Drain to Source Voltage (Vdss) :

40V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Supplier Device Package :

DIRECTFET™ MX

Operating Temperature :

-40°C~150°C TJ

Turn On Delay Time :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Drain to Source Resistance :

6.2mOhm

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

40V

RoHS Status :

RoHS Compliant

Width :

5.05mm

Number of Pins :

5

Rds On Max :

5 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

3765pF @ 20V

Nominal Vgs :

1.8 V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Mount :

Surface Mount

Number of Elements :

1

Continuous Drain Current (ID) :

15A

Resistance :

5mOhm

Published :

2007

Vgs (Max) :

±20V

Height :

508μm

Package / Case :

DirectFET™ Isometric MX

Series :

HEXFET®